+/-3.97%Best replay uniformityUNKNOWNInspect metric contract
7.7 nm / 100 nmCenter-edge dropUNKNOWNInspect metric contract
2 radial profilesCasesUNKNOWNInspect metric contract
SIMULATION / SA-PROC-PVD-SPUTTER-UNIFORMITY-001
Sputter deposition thickness uniformity
Sputter Uniformity
Replay radial film-thickness profiles to see why rotation, source shape, pressure regime, and geometry matter before a sputter recipe is trusted.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Start from the rotating-wafer reference and compare the center point against the wafer edge.
- Open the fixed-wafer case to see how the same nominal center thickness can hide a larger edge loss.
- Use the result as a deposition-uniformity vocabulary builder before measured witness-wafer maps are added.
RUN CARD
Conditions before conclusions.
The public page replays saved teaching profiles. It does not operate a sputter tool or run plasma/process recipes.
Primary knobs
- Wafer radius: 50 mm
- Nominal center thickness: 100 nm
- Rotation: averaged reference versus fixed-wafer sensitivity
- Profile: educational radial source spread
Saved outputs
- radial thickness samples
- center-edge drop
- half-range nonuniformity
- model-boundary notes
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-sputter-uniformity-web-v1.json
Open file ->Model script
/data/process_thin_film_models.py
Open file ->Process model card
/data/process-thin-film-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Normalize each radial sample to the center thickness.
Keep this method attached when reusing the figure or metric.
Compute center-edge drop from the center sample and absolute wafer-edge sample.
Keep this method attached when reusing the figure or metric.
Compute nonuniformity as half range divided by profile mean.
Keep this method attached when reusing the figure or metric.
Keep all recipe-sensitive details outside the public MVP.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No plasma chemistry, target erosion, film stress, reactive sputter kinetics, substrate temperature, or material-specific rate is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
The profile is a teaching object and must not be used as a facility recipe.
Carry this boundary into any derivative note, paper draft, or slide.
Real uniformity requires measured thickness maps, chamber history, tool configuration, and approved metrology.
Carry this boundary into any derivative note, paper draft, or slide.
Film quality, adhesion, contamination, and resist compatibility are out of scope.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves sampled radial positions, normalized thickness, and nonuniformity math.
SA-PROC-PVD-SPUTTER-UNIFORMITY-001
The model card lists process boundaries and next data needed before recipe-level claims.
SA-PROC-PVD-SPUTTER-UNIFORMITY-001
Source links are public cleanroom/education anchors, not proof of a specific SemiAgora process.
SA-PROC-PVD-SPUTTER-UNIFORMITY-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
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