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SIMULATION / SA-INT-ETCH-DEPTH-043

Etch depth and selectivity evidence atlas
Compare six etch mechanism families without collapsing their evidence boundaries.

Move across HAR profile evolution, atomic-layer etch, selective etch, DRIE, strip and ash, and wet etch using one bounded review surface. Each family preserves its own controls, normalized proxies, exact ledgers, source spine, role gates, and replacement-evidence questions.

Public releaseV111
Verification102/102 dual-domain pass
Source commit316a0747d635615adcd72eab4f06f30da464d311
Trace release lineage ->
sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Select one of six etch families before loading row data; the first view exposes only bounded metadata, row counts, source posture, rights boundary, and export contracts.
  • Hold seven categorical controls fixed, then compare eight ordered evidence states without treating the state index as time, depth, cycle count, or recipe progression.
  • Switch among operator, process-engineer, integration, and yield views to expose which observations, models, interfaces, genealogy, denominators, and uncertainty records remain accountable.
  • Compare six normalized teaching proxies and three exact integer ledgers inside each family while keeping mechanisms and evidence ownership separate across families.
  • Use the source spines and replacement slots to plan owned physical models, measurements, equipment traces, material context, validation, and human review before any operational decision.

BROWSER ETCH DEPTH EVIDENCE ATLAS

Choose the mechanism family before loading the evidence rows.

Compact metadata is present at first paint. The browser fetches one validated family CSV only after this explicit selection, and discards it when the family changes.

selected packet

High-aspect-ratio profile evolution

How do neutral access, ion access, mask margin, sidewall protection, and profile distortion evidence change together as feature burden rises?

Rows
6,912
Physical states
3,456
Sources
11 open / 9 gated
Browser transfer
One CSV on request
11.5 MB / row JSON remains private
No row data has been loaded.

Review the selected packet boundary, then load exactly one validated family CSV. Changing families discards the loaded rows; row-bearing JSON remains outside the website.

Compact manifestMetric contractModel cardSource spine

RUN CARD

Conditions before conclusions.

The browser filters one validated CSV selected by the user. It does not solve a physical model, transfer source numbers, import measurements, infer causality, choose chemistry, recommend a recipe, operate equipment, qualify a process, or make a release decision.

precomputed-browser-single-family-csv-etch-evidence-atlas

Primary knobs

  • etch family: HAR, ALE, selective etch, DRIE, strip and ash, or wet etch
  • seven family-specific categorical mechanism and evidence axes
  • eight ordered teaching states
  • operator, process-engineer, integration, or yield evidence gate
  • teaching assumption or accountable replacement slot
outputs

Saved outputs

  • six family-specific normalized readiness, control, or burden proxies
  • family-specific regime, measurement traceability, role, and handoff gates
  • three exact integer teaching ledgers per family
  • compact manifest, metric contract, model card, source spine, and explicitly loaded CSV

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

HAR compact manifest

/data/har-profile-state-public-manifest-v1.json

Open file ->
download

ALE compact manifest

/data/ale-cycle-state-public-manifest-v1.json

Open file ->
download

Selective etch CSV

/data/selective-etch-state-v1.csv

Open file ->
download

Selective etch compact manifest

/data/selective-etch-state-public-manifest-v1.json

Open file ->
download

DRIE compact manifest

/data/drie-profile-state-public-manifest-v1.json

Open file ->
download

Strip / ash CSV

/data/strip-ash-state-v1.csv

Open file ->
download

Strip / ash compact manifest

/data/strip-ash-state-public-manifest-v1.json

Open file ->
download

Wet etch compact manifest

/data/wet-etch-state-public-manifest-v1.json

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Six independently completed packets each enumerate 6,912 rows over 3,456 physical configurations and paired evidence postures, for 41,472 deterministic rows and 20,736 evidence pairs.

Keep this method attached when reusing the figure or metric.

method

Each family keeps its own mechanism-context controls, normalized equations, eight-state regime map, four role gates, replacement-evidence bridge, and three exact integer teaching ledgers.

Keep this method attached when reusing the figure or metric.

method

Independent no-import verifiers passed 16/16 for every family, source-scope locks passed 37/37 for every family, and deterministic replay parity was exact for all twenty-four regenerated artifacts.

Keep this method attached when reusing the figure or metric.

method

One hundred twenty link-only official or primary-source metadata anchors and ninety-six bounded claim nodes define terminology, rights, evidence ownership, and replacement questions without supplying generated numbers.

Keep this method attached when reusing the figure or metric.

method

The transport contract publishes thirty approved CSV, compact-manifest, metric-contract, model-card, and source-spine artifacts while retaining six row-bearing JSON artifacts with canonical evidence only.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

All states, regimes, proxies, gates, and priority cues are original categorical or dimensionless teaching constructs, not physical etch, transport, surface-reaction, profile, residue, damage, equipment, metrology, reliability, or yield predictions.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The eighteen exact integer ledgers establish deterministic bookkeeping consistency only. They do not establish physical causality, calibration, material compatibility, uncertainty, model transfer, traceability, qualification, safety, or production fitness.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No source body, source number, equation, coefficient, chemistry, geometry, material property, process condition, recipe, equipment setting, measurement row, model parameter, result, specification, or named-tool output enters the generated data.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No equipment-control instruction is provided. The browser loads one selected-family CSV only after explicit user action. It cannot operate equipment, choose chemistry, recommend a process window, set an endpoint, release material, sign off integration, dispose a wafer, claim yield, or publish automatically.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

Input audit passed 101/101 across six packet-complete families, 41,472 rows, 20,736 physical configurations, 120 sources, 96 claim nodes, and thirty approved public assets.

SA-INT-ETCH-DEPTH-043

evidence note

All six independent packet verifiers passed 16/16 and all six source-scope locks passed 37/37; the preintegration verifier passed thirteen hashes and seven semantic gates.

SA-INT-ETCH-DEPTH-043

evidence note

Source reachability closed at 78 reachable and 42 access-gated records, with zero recorded hard or network failures in the packet audits.

SA-INT-ETCH-DEPTH-043

evidence note

The browser excludes 339,764,102 bytes of row-bearing JSON and fetches one selected-family CSV only after explicit action; no all-family CSV preload is permitted.

SA-INT-ETCH-DEPTH-043

evidence note

Every family public manifest is compact and row-free, every copied public artifact matches its canonical SHA-256, and all private row JSON names remain absent from public data.

SA-INT-ETCH-DEPTH-043

Source spine

These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.

HAR / Plasma Science for Microelectronics Nanofabrication Workshop ReportCross-scale plasma, surface, diagnostics, uncertainty, and validation boundary. Rights: link-only; DOE and report notices apply.HAR / Microscopic uniformity in plasma etchingARDE, microscopic nonuniformity, transport, and charging taxonomy. Rights: link-only; publisher rights apply.ALE / Plasma science for semiconductor manufacturing reportTrue and quasi plasma-enhanced ALE, self-limiting modification and removal, plasma flux, damage, throughput, and evidence-gap ownership. Rights: link-only; U.S. government and report notices apply.ALE / Atomic Layer Etching at the Tipping Point: An OverviewALE taxonomy, sequential self-limited steps, selectivity, surface damage, and pattern-transfer evidence ownership. Rights: link-only; repository and journal notices apply.Selective etch / Plasma Science for Semiconductor ManufacturingRemote and downstream plasma context, plasma-surface evidence gaps, energetic-particle exposure, selectivity, damage, diagnostics, and manufacturing evidence ownership. Rights: link-only; U.S. government and report notices apply.Selective etch / Chemical Downstream Etching of Ge, Si, and SiNx FilmsSelective isotropic downstream etch, exposed-material competition, inhibition, residue, release-layer, and integration evidence ownership. Rights: link-only; repository and journal notices apply.DRIE / Method of anisotropically etching siliconFoundational time-multiplexed etch and passivation process taxonomy. Rights: link-only; patent and database notices apply.DRIE / Method of anisotropic etching of siliconLater anisotropic silicon etch process taxonomy and continuous-versus-cyclic context. Rights: link-only; patent and database notices apply.Strip / ash / Resist stripping in an O2 + H2O plasma downstreamRemote/downstream radical-delivery, resist-removal, contamination, and additive-context evidence categories. Rights: link-only; publisher rights apply.Strip / ash / Photoresist Ashing by Atmospheric Pressure Glow PlasmaOxidative-radical removal, optical/surface diagnostics, and spatial-application evidence categories. Rights: link-only; publisher rights apply.Wet etch / Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I. Orientation Dependence and Behavior of Passivation LayersCrystal-orientation, passivation, and anisotropic-etch evidence categories. Rights: link-only; publisher rights apply.Wet etch / Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: II. Influence of DopantsDopant-sensitive anisotropic-etch and etch-stop evidence categories. Rights: link-only; publisher rights apply.

Public execution boundary

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