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SIMULATION / SRAM_BITLINE_SENSE_001

SRAM bitline differential sensing
Bitline Sense

Replay a lumped-bitline model that connects cell current, bitline capacitance, and sense-enable timing.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Increase cell current and observe the inverse delay trend.
  • Keep the 100 fF bitline capacitance fixed while reading the timing marker.
  • Use the result to decide when a sense amplifier may safely enable.

RUN CARD

Conditions before conclusions.

The current page replays saved current-source cases and does not run a new circuit job.

precomputed replay

Primary knobs

  • Cell current: 20 uA, 40 uA, 80 uA
  • Bitline capacitance: 100 fF
  • Sense differential: 100 mV
  • Identity: t = C_BL * DeltaV / I_cell
outputs

Saved outputs

  • differential waveform
  • sense time
  • analytical cross-check
  • delay ordering

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/bitline-sense-web-v1.json

Open file ->
download

Weak current netlist

/data/sense-weak.spice

Open file ->
download

Nominal current netlist

/data/sense-nominal.spice

Open file ->
download

Strong current netlist

/data/sense-strong.spice

Open file ->
download

Package script

/data/package_bitline_sense.py

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Hold capacitance and threshold constant while changing current.

Keep this method attached when reusing the figure or metric.

method

Measure time to 100 mV differential.

Keep this method attached when reusing the figure or metric.

method

Cross-check ngspice results against the lumped C * V / I identity.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No transistor-level 6T nonlinearity, distributed column RC, mismatch, noise, or latch sense amplifier is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The 100 mV marker is a teaching threshold, not a characterized production specification.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

This model explains bitline development, not full SRAM read access timing.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

Verification records three converged cases and monotonic delay with current.

SRAM_BITLINE_SENSE_001

evidence note

The maximum analytical error is preserved in the dataset.

SRAM_BITLINE_SENSE_001

evidence note

All source netlists and the package script are downloadable.

SRAM_BITLINE_SENSE_001

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.