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SIMULATION / SA-MEM-003-FEFET-HYSTERESIS-001

FeFET hysteresis, wake-up, fatigue, and usable window
FeFET Window

Replay cycle count, temperature, and program pulse to see how ferroelectric memory window can wake up, fatigue, and shift.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Keep hysteresis window, imprint shift, wake-up, fatigue, and retention language together.
  • Compare early-cycle and high-cycle behavior before trusting one memory-window number.
  • Use the card to prepare for FeRAM/FeFET literature without copying device data.

RUN CARD

Conditions before conclusions.

This page replays saved FeFET data and does not run a ferroelectric compact model or measured endurance flow.

precomputed ferroelectric-memory sweep

Primary knobs

  • Cycle count
  • Temperature
  • Program-pulse proxy
outputs

Saved outputs

  • Memory window
  • Imprint shift
  • Usable window

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/fefet-hysteresis-wakeup-fatigue-web-v1.json

Open file ->
download

Dataset CSV

/data/fefet-hysteresis-wakeup-fatigue-v64.csv

Open file ->
download

v64 deep simulation summary CSV

/data/v64-deep-simulations-summary.csv

Open file ->
download

v64 deep model script

/data/v64_deep_semiconductor_sims.mjs

Open file ->
download

v64 deep model card

/data/v64-deep-simulations-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Memory window starts from a nominal hysteresis width, then includes wake-up, fatigue, and temperature-loss terms.

Keep this method attached when reusing the figure or metric.

method

Imprint shift increases with cycle count and temperature.

Keep this method attached when reusing the figure or metric.

method

Usable window subtracts imprint and a fixed sensing guardband from the memory window.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No HfO2 stack, domain switching model, measured polarization, retention, endurance, or wake-up/fatigue dataset is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No process integration, embedded NVM, or product-memory claim is made.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Real FeFET work needs material stack, pulse protocol, measured hysteresis, and retention/endurance evidence.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

v64 deep results store every cycle, temperature, pulse, window, and imprint row.

SA-MEM-003-FEFET-HYSTERESIS-001

evidence note

CSV export preserves the ferroelectric-memory table.

SA-MEM-003-FEFET-HYSTERESIS-001

evidence note

The source spine keeps this as an emerging-memory lesson with explicit uncertainty.

SA-MEM-003-FEFET-HYSTERESIS-001

Public execution boundary

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