0.01Lowest ECC marginUNKNOWNInspect metric contract
TLC / 100 P-E / 36 monthsWorst caseUNKNOWNInspect metric contract
36 casesSweep rowsUNKNOWNInspect metric contract
SIMULATION / SA-MEM-003-NAND-THRESHOLD-ECC-001
NAND threshold distributions and ECC margin
NAND ECC Margin
Replay SLC/MLC/TLC/QLC threshold crowding, P/E cycles, retention time, and ECC margin proxy.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Compare bits per cell before treating Flash as one memory technology.
- Read endurance and retention together because both widen threshold distributions.
- Use ECC margin as a system-facing translation of device distribution overlap.
RUN CARD
Conditions before conclusions.
This page replays saved NAND threshold data and does not run a live SSD, NAND device model, or ECC encoder.
Primary knobs
- Bits per cell
- P/E cycles
- Retention time
Saved outputs
- Vt sigma proxy
- Distribution overlap proxy
- ECC margin index
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/nand-threshold-ecc-margin-web-v1.json
Open file ->Dataset CSV
/data/nand-threshold-ecc-margin-v64.csv
Open file ->v64 deep simulation summary CSV
/data/v64-deep-simulations-summary.csv
Open file ->v64 deep model script
/data/v64_deep_semiconductor_sims.mjs
Open file ->v64 deep model card
/data/v64-deep-simulations-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Distribution spacing shrinks as bits per cell increases.
Keep this method attached when reusing the figure or metric.
Threshold sigma grows with P/E cycles and retention time.
Keep this method attached when reusing the figure or metric.
ECC margin index falls as distribution overlap increases.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No real NAND distribution, program-verify algorithm, read-retry, LDPC/BCH implementation, or SSD firmware is included.
Carry this boundary into any derivative note, paper draft, or slide.
No endurance rating, data-retention guarantee, or product comparison is made.
Carry this boundary into any derivative note, paper draft, or slide.
Real Flash work needs measured Vt distributions, controller behavior, ECC details, and qualification data.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
v64 deep results store every mode, cycle, retention, overlap, and margin row.
SA-MEM-003-NAND-THRESHOLD-ECC-001
CSV export preserves the threshold/ECC comparison.
SA-MEM-003-NAND-THRESHOLD-ECC-001
The memory source spine keeps Flash inside a rights-clean hierarchy lesson.
SA-MEM-003-NAND-THRESHOLD-ECC-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
IEEE IRDSRoadmap source spine for SCM, Flash, ferroelectric, and emerging-memory vocabulary.CrossSimExternal analog in-memory computing reference kept link-only until manual review.MNSIM 2.0External memristor PIM reference kept link-only until rights review.Kioxia multi-level cell technologyPublic vendor explainer for threshold-state reading vocabulary; v64 uses original teaching data.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.