42.523%Best drive gain proxyUNKNOWNInspect metric contract
64.7Highest deformation riskUNKNOWNInspect metric contract
48 casesSweep rowsUNKNOWNInspect metric contract
SIMULATION / SA-DEV-STRESS-001
Source/drain stressor strain, mobility, and deformation-risk replay
Stress Engineering
Replay architecture, channel stressor, stress proxy, and temperature to compare mobility gain, drive-current gain, Vt shift, leakage, and mechanical deformation risk.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Treat stress engineering as a process-to-device handoff, not only a mobility trick.
- Compare mobility gain with Vt shift, leakage, and mechanical risk before claiming a PPA win.
- Use FinFET, nanosheet, and CFET-watch categories to keep advanced CMOS architecture honest.
RUN CARD
Conditions before conclusions.
This page replays saved Stress Engineering rows and does not run a live solver, upload workflow, proprietary model, process recipe, or signoff flow.
Primary knobs
- Architecture
- Channel stressor
- Stress proxy
- Ambient temperature
Saved outputs
- Mobility gain
- drive-current gain
- Vt shift
- leakage multiplier
- deformation risk
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/sd-stressor-strain-mobility-risk-web-v1.json
Open file ->Dataset CSV
/data/sd-stressor-strain-mobility-risk-v69.csv
Open file ->v69 knowledge sprint summary CSV
/data/v69-knowledge-sim-sprint-summary.csv
Open file ->v69 knowledge sprint model script
/data/v69_knowledge_sim_sprint.mjs
Open file ->v69 knowledge sprint model card
/data/v69-knowledge-sim-sprint-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Mobility gain follows a saturating stress response with architecture and channel factors.
Keep this method attached when reusing the figure or metric.
Drive-current gain applies a stress overhead after mobility improvement.
Keep this method attached when reusing the figure or metric.
Mechanical deformation risk rises with stress, architecture sensitivity, and temperature.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No calibrated stress tensor, TCAD solve, process flow, or measured mobility data is included.
Carry this boundary into any derivative note, paper draft, or slide.
CFET is a watch category, not a process feasibility claim.
Carry this boundary into any derivative note, paper draft, or slide.
The page teaches gain-versus-risk structure, not a source/drain stressor recipe.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The JSON export stores architecture, stress, temperature, mobility, Vt, leakage, and risk rows.
SA-DEV-STRESS-001
The CSV export can become a bridge worksheet between process modules and device PPA.
SA-DEV-STRESS-001
The simulation deepens the Advanced Device track beyond geometry and electrostatics.
SA-DEV-STRESS-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.