Fin count is a PPA choice, not a free drive-current knob.
More fins raise drive current, but capacitance and leakage decide whether the device helps a circuit.
Open simulation ->LESSON PACKET / SA-DEV-001
Advanced devices need evidence layers.
Geometry is not the whole answer.
This packet introduces FinFET, GAA nanosheet, CFET contact/interconnect, GaN/SiC HEMT, and dynamic-Ron tradeoffs as precomputed evidence cards: drive current, capacitance, leakage, variability, and PPA score stay visible together.
DEVICE ARCHITECTURE
Planar to FinFET to GAA is a chain of tradeoffs.
The useful question is not which architecture sounds advanced. It is which geometry, capacitance, leakage, variability, and circuit metric were actually compared.
Sheet width and stack count move drive, capacitance, and variability together.
Gate-all-around control improves electrostatics, but geometry still trades channel width, capacitance, and Vt sigma.
Open simulation ->Stacked devices still need contact and local-interconnect evidence.
CFET density gain becomes useful only after contact resistance, via alignment, local capacitance, thermal coupling, and integration risk survive a circuit-context check.
Open simulation ->Wide-bandgap devices need substrate-to-reliability evidence.
Semi-insulating SiC, GaN buffer traps, HEMT mode, package thermal path, dynamic Ron, and mission-profile reliability decide whether the material story is usable.
Open simulation ->GaN Ron evidence depends on stress and recovery.
Trap memory, current collapse, recovery window, thermal context, and measurement method must stay visible before a dynamic-Ron number becomes useful.
Open simulation ->SIMULATION BUNDLE
Use the card before making a roadmap claim.
Each card states its model boundary, export data, method, limitation, and source spine.
FinFET fin count versus PPA
Replay fin count, gate length, and Vt flavor to compare drive current, capacitance, leakage, delay index, and PPA score.
128.14841 fins / Lg 10 nm / SVT24 cases
Open run card ->GAA nanosheet width, stack count, and electrostatics
Replay sheet count, nanosheet width, and variability class to compare control, drive, capacitance, Vt sigma, and PPA score.
89.54944 sheets / 28 nm / low27 cases
Open run card ->Source/drain stressor strain, mobility, and deformation-risk replay
Replay architecture, channel stressor, stress proxy, and temperature to compare mobility gain, drive-current gain, Vt shift, leakage, and mechanical deformation risk.
42.523%64.748 cases
Open run card ->Public boundary
No TCAD server, compact-model ingestion, PDK deck, foundry rule, process-node forecast, measured-silicon claim, upload, account, payment, comment, or signoff workflow is active. These are precomputed architecture replays.
Open Device domain ->