2304 casesprecomputed rowsUNKNOWNInspect metric contract
4 profilessubstrate profilesUNKNOWNInspect metric contract
0live server runsUNKNOWNInspect metric contract
4 viewsrole viewsUNKNOWNInspect metric contract
SIMULATION / SA-PWR-GAN-SIC-002
GaN-on-SiC HEMT substrate chain
GaN/SiC HEMT
A browser CSV lab for wide-bandgap device pathfinding: compare semi-insulating SiC, high-resistivity SiC, GaN-on-Si, and bonded GaN-SiC watch cases against buffer traps, RF loss, thermal path, dynamic Ron, breakdown margin, package heat path, reliability review, and application fit.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Compare semi-insulating SiC, high-resistivity SiC scale-up, GaN-on-Si cost reference, and bonded GaN-SiC interface watch cases before naming a substrate winner.
- Filter buffer strategy, HEMT mode, package heat path, reliability stress, and application context to see which risk owns the decision gate.
- Watch thermal relief, RF loss risk, buffer trap risk, dynamic Ron risk, breakdown margin, integration risk, and application fit move together.
- Use substrate, process integration, RF/power device, and package/reliability role views so a material advantage does not become an unsupported product claim.
BROWSER INTERACTIVE LAB
Filter the saved CSV. Inspect matching replay rows.
No server solver is running here. The browser filters a precomputed table and redraws the plot locally.
Loading replay rowsReading the saved CSV in this browser.
application fit scorethermal relief indexrf loss risk proxydynamic ron riskintegration risk proxy
Each metric is normalized independently for shape inspection. Vertical positions do not compare magnitude across metrics.
n/aapplication fit score
n/athermal relief index
n/arf loss risk proxy
n/adynamic ron risk
n/aintegration risk proxy
Change one or more controls to find a saved row. No unrelated CSV value is substituted.
| case id | substrate profile | epitaxy buffer strategy | hemt mode | thermal stack | reliability context | application context | thermal relief index | rf loss risk proxy | dynamic ron risk | application fit score | decision gate | next safe check |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Loading saved replay rows... | ||||||||||||
RUN CARD
Conditions before conclusions.
The browser filters saved CSV rows. It does not run live TCAD, electrothermal solving, RF simulation, SPICE, wafer/process fitting, uploaded designs, equipment workflows, or product qualification.
Primary knobs
- substrate profile
- epitaxy/buffer strategy
- HEMT mode
- thermal stack
- reliability context
- application context
Saved outputs
- thermal relief index
- RF loss risk proxy
- buffer trap risk
- dynamic Ron risk
- breakdown margin proxy
- package heat path score
- reliability review score
- application fit score
- decision gate
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
GaN/SiC HEMT substrate replay CSV
/data/gan-sic-hemt-substrate-chain-v83.csv
Open file ->Typed web JSON
/data/gan-sic-hemt-substrate-chain-web-v1.json
Open file ->Model card
/data/gan-sic-hemt-substrate-chain-model-card-v1.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Generate a Cartesian synthetic sweep across substrate profile, buffer strategy, HEMT mode, thermal stack, reliability context, and application context.
Keep this method attached when reusing the figure or metric.
Normalize public wide-bandgap, GaN-on-SiC, thermal-path, RF-loss, dynamic Ron, TDDB, hot-carrier, and mission-profile vocabulary into proxy scores.
Keep this method attached when reusing the figure or metric.
Apply decision gates that prioritize thermal path, trap/dynamic Ron, normally-off reliability, interface thermal boundary, and cost/scale review before any candidate label.
Keep this method attached when reusing the figure or metric.
Store the CSV, typed JSON, model card, and source boundary under the public data folder and experiment folder.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No GaN epitaxy recipe, process recipe, gas flow, wafer specification, equipment setting, TCAD deck, RF simulator setup, or measured wafer data is included.
Carry this boundary into any derivative note, paper draft, or slide.
No live server TCAD, electrothermal solver, SPICE, RF simulation, layout extraction, uploaded design, account, payment, comment, newsletter signup, job/event submission, or public service intake is active.
Carry this boundary into any derivative note, paper draft, or slide.
No product recommendation, substrate supplier ranking, qualified reliability result, cost/availability claim, foundry claim, PA/converter release claim, or mission-profile signoff is made.
Carry this boundary into any derivative note, paper draft, or slide.
Rows are normalized synthetic teaching proxies and require rights-cleared replacement evidence before stronger engineering reuse.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
CSV replay with 2304 rows and explicit thermal, RF loss, trap, dynamic Ron, reliability, integration, and application-fit decision gates.
SA-PWR-GAN-SIC-002
Typed JSON summary with role views, top candidates, trap-limited rows, source anchors, methods, limits, and public boundary.
SA-PWR-GAN-SIC-002
Model card saved beside the public dataset and experiment record.
SA-PWR-GAN-SIC-002
Source spine uses public links only and does not copy restricted vendor, supplier, process, paper, or wafer data.
SA-PWR-GAN-SIC-002
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Wolfspeed silicon carbide for RF devicesPublic source for HPSI SiC substrate and GaN epitaxy vocabulary, including high-purity semi-insulating material framing.Coherent SiC for RF electronicsPublic source for GaN-on-SiC RF power amplifier substrate framing, high resistivity, thermal conductivity, and diameter scale-up vocabulary.Qorvo GaN primerPublic source for GaN-on-SiC versus GaN-on-Si RF/power context and the link between GaN power density and SiC thermal/RF behavior.DOE wide bandgap power electronics assessmentPublic source for wide-bandgap power electronics framing: voltage, temperature, switching frequency, efficiency, packaging, and reliability.PowerAmerica WBG short coursePublic source for SiC/GaN education topics including GaN reliability, dynamic Ron, TDDB, hot-carrier wearout, and mission-profile vocabulary.imec high-k GaN MOS-HEMT reliabilityPublic source for GaN RF MOS-HEMT scaling, high-k gate stack, charge trapping, and DC reliability vocabulary.GaN-SiC thermal boundary conductance paperOpen metadata/source anchor for GaN-SiC thermal boundary conductance and channel-temperature-limited HEMT framing.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.