89.5494Highest PPA scoreUNKNOWNInspect metric contract
4 sheets / 28 nm / lowBest caseUNKNOWNInspect metric contract
27 casesSweep rowsUNKNOWNInspect metric contract
SIMULATION / SA-DEV-001-GAA-NANOSHEET-001
GAA nanosheet width, stack count, and electrostatics
GAA Nanosheet
Replay sheet count, nanosheet width, and variability class to compare control, drive, capacitance, Vt sigma, and PPA score.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Treat sheet width and stack count as coupled geometry choices.
- Read electrostatic control, drive, capacitance, and Vt sigma together.
- Use variability class to avoid drawing roadmap conclusions from one ideal geometry.
RUN CARD
Conditions before conclusions.
This page replays saved GAA data and does not run TCAD, compact models, PDK decks, or process integration flows.
Primary knobs
- Sheet count
- Nanosheet width
- Variability class
Saved outputs
- Electrostatic control
- Drive proxy
- Capacitance
- Vt sigma
- PPA score
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/gaa-nanosheet-electrostatics-web-v1.json
Open file ->Dataset CSV
/data/gaa-nanosheet-electrostatics-v64.csv
Open file ->v64 deep simulation summary CSV
/data/v64-deep-simulations-summary.csv
Open file ->v64 deep model script
/data/v64_deep_semiconductor_sims.mjs
Open file ->v64 deep model card
/data/v64-deep-simulations-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Electrostatic control is reduced by width and variability, then improved by added sheets.
Keep this method attached when reusing the figure or metric.
Drive scales with sheet count, width, and control index.
Keep this method attached when reusing the figure or metric.
PPA score penalizes capacitance and Vt variability.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No real nanosheet cross-section, inner spacer, source/drain stressor, contact resistance, self-heating, or CFET/forksheet process is included.
Carry this boundary into any derivative note, paper draft, or slide.
No roadmap production claim is made.
Carry this boundary into any derivative note, paper draft, or slide.
Real advanced-device work needs calibrated TCAD, process integration assumptions, variability data, and circuit benchmark evidence.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
v64 deep results store every sheet, width, variability, control, drive, capacitance, and score row.
SA-DEV-001-GAA-NANOSHEET-001
CSV export preserves the GAA comparison.
SA-DEV-001-GAA-NANOSHEET-001
The domain roadmap keeps this as a device-to-circuit bridge, not a node forecast.
SA-DEV-001-GAA-NANOSHEET-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.