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SIMULATION / SA-MEM-NAND3D-001

3D NAND string Vt distribution, read-retry, and ECC margin replay
3D NAND Vt/ECC

Replay layer group, program/erase cycles, retention time, and read-retry steps to connect 3D NAND stack variation with threshold overlap and ECC margin.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Move from generic NAND threshold crowding into layer-aware 3D NAND behavior.
  • Keep retention, cycling, read-retry, and ECC in one table because storage reliability is a system chain.
  • Use layer group as a public-safe way to discuss stack nonuniformity without vendor data.

RUN CARD

Conditions before conclusions.

This page replays saved 3D NAND Vt/ECC rows and does not run a live solver, upload workflow, proprietary model, process recipe, or signoff flow.

precomputed 3D NAND Vt/ECC sweep

Primary knobs

  • Layer group
  • P/E cycles
  • Retention days
  • Read-retry steps
outputs

Saved outputs

  • Vt sigma
  • Vt shift
  • state overlap
  • raw BER proxy
  • ECC margin

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/3d-nand-string-vt-ecc-retention-web-v1.json

Open file ->
download

Dataset CSV

/data/3d-nand-string-vt-ecc-retention-v69.csv

Open file ->
download

v69 knowledge sprint summary CSV

/data/v69-knowledge-sim-sprint-summary.csv

Open file ->
download

v69 knowledge sprint model script

/data/v69_knowledge_sim_sprint.mjs

Open file ->
download

v69 knowledge sprint model card

/data/v69-knowledge-sim-sprint-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Vt sigma grows with cycle stress, retention stress, and layer-group proxy.

Keep this method attached when reusing the figure or metric.

method

Read-retry steps reduce overlap through a simplified recovery term.

Keep this method attached when reusing the figure or metric.

method

Raw BER and ECC margin are derived teaching proxies from the state-overlap index.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No vendor NAND characterization, program-verify algorithm, controller firmware, LDPC/BCH implementation, or recovery workflow is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Layer-group effects are normalized teaching proxies.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

This is not a product endurance, retention, data-recovery, or SSD reliability claim.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

The JSON export stores layer, cycle, retention, retry, Vt, BER, and ECC-margin rows.

SA-MEM-NAND3D-001

evidence note

The CSV export supports comparison against the existing NAND threshold/ECC card.

SA-MEM-NAND3D-001

evidence note

The card deepens Memory School toward Flash and storage roles without exposing controller workflows.

SA-MEM-NAND3D-001

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.