0.22 nmOxide at index 3UNKNOWNInspect metric contract
84 degContact angle at index 4UNKNOWNInspect metric contract
0.78Reoxidation sensitivityUNKNOWNInspect metric contract
SIMULATION / SA-PROC-CLEAN-DHF-NATIVE-OXIDE-001
Dilute HF native-oxide window
Native Oxide
Replay a normalized native-oxide removal window with hydrophobicity, reoxidation sensitivity, and queue-time caution shown together.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Watch oxide proxy fall while hydrophobicity rises on a normalized exposure axis.
- Read reoxidation and queue-time risk before treating oxide removal as a completed claim.
- Use the card to plan what oxide-state measurement belongs next to a contact or deposition result.
RUN CARD
Conditions before conclusions.
The public page replays saved native-oxide teaching data. It does not prescribe HF use, operate equipment, or accept process settings.
Primary knobs
- Normalized exposure index: 0 to 5
- Outputs: native-oxide remaining, contact-angle proxy, reoxidation sensitivity, queue-time risk
- Review focus: oxide state versus downstream sensitivity
- Boundary: no HF concentration, time, bath, vapor process, or safety instruction
Saved outputs
- oxide-removal trend
- hydrophobicity proxy
- reoxidation and queue-risk warning
- public non-recipe boundary
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-dilute-hf-native-oxide-window-web-v1.json
Open file ->Model script
/data/process_wet_clean_models.py
Open file ->Wet clean model card
/data/process-wet-clean-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Use a normalized exposure index to make the oxide-state tradeoff visible without publishing a procedure.
Keep this method attached when reusing the figure or metric.
Report hydrophobicity and reoxidation sensitivity as separate proxies.
Keep this method attached when reusing the figure or metric.
Check oxide decreases while queue-time and reoxidation risk increase.
Keep this method attached when reusing the figure or metric.
Treat the result as a paper-review prompt, not a process recommendation.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No HF recipe, concentration, exposure time, safety procedure, facility rule, or waste-handling instruction is included.
Carry this boundary into any derivative note, paper draft, or slide.
No ellipsometry, XPS, contact-angle, contact-resistance, or qualified metrology result is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
The normalized axis is a teaching variable and cannot be translated into a real process without local approval.
Carry this boundary into any derivative note, paper draft, or slide.
Real oxide-state evidence requires calibrated metrology, material review, queue-time notes, and qualified facility procedures.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves six normalized oxide-state samples.
SA-PROC-CLEAN-DHF-NATIVE-OXIDE-001
Verification checks oxide decrease, hydrophobicity increase, and reoxidation-risk increase.
SA-PROC-CLEAN-DHF-NATIVE-OXIDE-001
Source notes keep native-oxide vocabulary attached to the non-claim boundary.
SA-PROC-CLEAN-DHF-NATIVE-OXIDE-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Stanford SNF Pre-Diffusion CleanPublic SNF guide page describing SC1, SC2, and optional HF dip roles for organics, particles, metals, and native oxide context.NIST wet chemical cleaning publicationPublic NIST publication page anchoring wet cleaning as surface preparation before epitaxy, metal/dielectric deposition, and diffusion.NIST CHIPS Metrology ProgramPublic NIST page framing fit-for-purpose measurement as a core semiconductor capability as device structures become smaller and more layered.
Public execution boundary
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