Skip to content
SASemiAgoraSemiconductor knowledge & engineeringOpen clean sim

LESSON PACKET / SA-PROC-006

Wet clean and surface preparation.
The surface remembers.

Wet clean, native oxide control, and adhesion preparation sit between nearly every process module. The MVP teaches the evidence lanes without publishing chemical settings, facility flows, or equipment instructions.

lessonSurface EvidenceobjectsSimulation BundlelabReplay BundlepublicSource SpineroadmapData To Collect

SURFACE EVIDENCE CHAIN

Teach the surface state before teaching the next tool.

For a comprehensive semiconductor site, cleaning belongs beside deposition, lithography, oxidation, contact, and packaging. The public version is evidence planning, not a process traveler.

01 / CONTAMINATION CLASSES

Clean claims must name what changed.

Organics, particles, metals, and native oxide are different evidence lanes. A useful public clean claim keeps the target and remaining uncertainty visible.

88.0% / 80.0% / 80.0% / open simulation ->
02 / NATIVE OXIDE

Oxide removal creates a queue-time question.

A lower oxide proxy can raise hydrophobicity and reoxidation sensitivity. The downstream process decides which state matters.

0.22 nm / 84 deg / open simulation ->
03 / ADHESION PRIME

HMDS is a readiness claim, not a magic label.

Dehydration, surface energy, adhesion score, and delay or overprime risk should travel together before lithography evidence is reused.

0.91 score / open simulation ->
04 / SEQUENCE QUEUE

Downstream intent chooses the evidence.

Oxidation, deposition, lithography, and contact-sensitive steps ask for different surface-state proof. The public page maps the questions without publishing a wafer flow.

16 evidence needs / open simulation ->

SIMULATION BUNDLE

Start from the surface claim if you are reading a paper.

Each object carries Explore, Run Card, Export, Methods, Limits, and Evidence. The lesson gives the process context; the simulation card carries the reusable artifact.

Process / live-precomputed

Wet clean contamination removal

Compare conceptual organic, particle, metal, and native-oxide proxies across a public-safe wet-clean evidence sequence.

Open Wet Clean ->
Process / live-precomputed

Dilute HF native-oxide window

Replay a normalized native-oxide removal window with hydrophobicity, reoxidation sensitivity, and queue-time caution shown together.

Open Native Oxide ->
Process / live-precomputed

HMDS adhesion-prime readiness

Compare dehydration, hydrophobicity, adhesion score, and overprime or delay risk for public-safe lithography surface-prep review.

Open HMDS Prime ->
Process / live-precomputed

Clean sequence decision queue

Map downstream process intent to surface target, evidence needs, and risk flags without publishing a wet-bench or lithography flow.

Open Clean Queue ->

SOURCE SPINE

Public sources anchor vocabulary, not process authority.

These links support clean, native oxide, HMDS, and metrology language. They do not authorize copying facility procedures or publishing operating conditions.

source

Stanford Nanofabrication Facility Pre-Diffusion Clean

https://snfguide.stanford.edu/taxonomy/term/712/all/feed?order=field_equipment_name&sort=desc

Open source ->
source

Stanford Nanofabrication Facility Standard Clean 1

https://snfguide.stanford.edu/guide/chemicals/acids/standard-clean-1

Open source ->
source

Stanford Nanofabrication Facility HMDS

https://snfguide.stanford.edu/guide/chemicals/primers/hmds

Open source ->
source

NIST wet chemical cleaning publication

https://www.nist.gov/publications/wet-chemical-cleaning-plasma-oxide-grown-heated-001-inp-surfaces

Open source ->
source

NIST CHIPS Metrology Program

https://www.nist.gov/chips/research-development-programs/metrology-program

Open source ->

DATA TO COLLECT NEXT

Surface-prep claims become useful when the missing measurement is named.

The next upgrade is rights-clean measurement summaries with uncertainty and non-claims, not secret recipes or facility control settings.

needed

Rights-clean particle, metal, organic-residue, and oxide-state summaries with sample count and uncertainty

Store the evidence with method, source rights, uncertainty, surface state, downstream intent, and what the result does not prove.

needed

Contact-angle or surface-energy measurements before and after queue delay, with material stack and storage state

Store the evidence with method, source rights, uncertainty, surface state, downstream intent, and what the result does not prove.

needed

Lithography adhesion or defect summaries that separate dehydration, HMDS prime, resist type, and exposure/develop evidence

Store the evidence with method, source rights, uncertainty, surface state, downstream intent, and what the result does not prove.

needed

Native-oxide or contact-resistance summaries for contact-sensitive flows, with no recipe settings exposed

Store the evidence with method, source rights, uncertainty, surface state, downstream intent, and what the result does not prove.

needed

Watermark, drying, and recontamination notes that are safe to publish and not facility procedures

Store the evidence with method, source rights, uncertainty, surface state, downstream intent, and what the result does not prove.

needed

Source-backed glossary cards for RCA, SC1, SC2, DHF, piranha, megasonic, Marangoni dry, HMDS, and queue time

Store the evidence with method, source rights, uncertainty, surface state, downstream intent, and what the result does not prove.

Public boundary

No live tool operation, recipe upload, account workflow, payment, comment, newsletter signup, job/event submission, endpoint control, release dashboard, facility credential collection, or wafer-routing workflow is active in this MVP.