Skip to content
SASemiAgoraSemiconductor knowledge & engineeringOpen lesson

SIMULATION / SA-SEED-MEM-ENVM-MARGIN-001

RRAM, PCM, and FeFET read-margin degradation
eNVM Margin

Replay endurance, temperature, variability, and normalized read margin across RRAM, PCM, and FeFET style memory labels.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Treat emerging memory as a margin distribution problem rather than a single technology label.
  • Compare endurance and temperature before ranking RRAM, PCM, or FeFET.
  • Use the worst-case proxy to ask what metrology or compact model would replace this toy model.

RUN CARD

Conditions before conclusions.

This page replays saved emerging-memory surrogate data and does not run material or compact-model solvers.

precomputed educational sweep

Primary knobs

  • Technology label
  • Cycle count
  • Temperature
outputs

Saved outputs

  • Normalized read margin
  • Read-error proxy
  • Worst-case row

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/emerging-memory-read-margin-web-v1.json

Open file ->
download

Seed sweep summary CSV

/data/github-open-source-seed-sweep-summary.csv

Open file ->
download

Seed model script

/data/github_open_source_seed_sims.py

Open file ->
download

Seed model card

/data/github-open-source-seed-sims-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Base margin is reduced by a log-cycle term and a temperature-loss term.

Keep this method attached when reusing the figure or metric.

method

Read-error proxy uses a simple exponential margin-over-variability mapping.

Keep this method attached when reusing the figure or metric.

method

Technology labels carry different base margin, variability, and drift constants for comparison only.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No filament, phase-change crystallization, ferroelectric polarization, retention, or disturb physics is calibrated.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No production endurance, qualification, or technology-selection claim is made.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Use external papers and measured distributions before making a device choice.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

Seed sweep JSON records every technology, cycle, temperature, margin, and error-proxy row.

SA-SEED-MEM-ENVM-MARGIN-001

evidence note

CSV export preserves the degradation comparison in table form.

SA-SEED-MEM-ENVM-MARGIN-001

evidence note

GitHub expedition notes MNSIM, CrossSim, MemTorch, NeuroSim, NVSim, and DESTINY as external study references.

SA-SEED-MEM-ENVM-MARGIN-001

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.