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DEEPEN ALL TRACKS

Every domain gets a ladder.
Every claim keeps evidence.

A static, evidence-first plan for deepening every semiconductor domain without enabling live execution or transactional workflows.

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DEPTH CONTRACT

Useful depth has four layers.

Each domain now has the same scaffold: foundation, simulation ladder, evidence ladder, and research output. That makes future additions comparable instead of scattered.

stage

Foundation

Foundation: vocabulary, mechanisms, and first-principles boundaries.

stage

Simulation ladder

Simulation ladder: precomputed cards that expose knobs, outputs, methods, and limits.

stage

Evidence ladder

Evidence ladder: source anchors, exports, uncertainty, and claim fitness.

stage

Research output

Research output: paper-ready figures, tables, methods notes, and limitations.

NINE DOMAIN ROADMAPS

All domains can deepen in parallel.

The cards below are not a promise that every simulation exists today. They are the public, rights-clean backlog that keeps the platform expanding toward a comprehensive semiconductor curriculum.

Process module engineer / integration handoff

Process

Process depth connects unit operation, mechanism, inline metric, device parameter, circuit timing, memory margin, and yield consequence.

  • small-data virtual metrology replay
  • defect pareto and inline inspection
  • ALD/CVD/PVD film nonuniformity comparison
  • measured replacement data for etch UQ replay
  • owned APC/FDC and feedforward replacement evidence
  • owned feature-profile replacement packet with physical dimensions, material provenance, profile metrology, uncertainty, and accountable process/integration review
  • owned plasma-to-feature replacement packet with physical boundary distributions, material/chemistry provenance, profile metrology, uncertainty, and integration review
  • SA-PROC-ETCH-ENDPOINT-011: endpoint-signal-to-profile-evidence map with independent post-process metrology, uncertainty, drift, and disposition boundaries
Open domain ->
Device physics / TCAD / characterization

Device

Device depth turns charge, potential, material stack, and geometry into extractable electrical curves.

  • Vt flavor selection
  • subthreshold swing and DIBL
  • owned pulsed I-V dynamic Ron replacement evidence
  • owned calibrated TCAD DOE replacement deck with measured I-V/C-V validation
  • owned architecture-comparison compact-model and extracted-RC replacement packet
  • rights-cleared converged mode/FDTD and optical-measurement replacement packet
  • owned rights-cleared Touchstone replacement packet with uncertainty propagation and independent broadband quality review
  • owned 2D-CFET replacement packet with contact TLM/test-structure evidence, calibrated model, extracted cell, circuit correlation, and uncertainty review
  • owned SNSPD replacement packet with spatial current/defect map, event/timing records, calibrated radiometry, background separation, uncertainty, and independent mechanism review
  • owned 2D heterojunction NDR replacement packet with material/stack provenance, signed gate-temperature sweeps, contact de-embedding, history, uncertainty, and independently reproduced mechanism calculations
  • owned thermoelectric sensor replacement packet with physical units, calibration records, reference standards, environmental/mechanical states, uncertainty, and independent review
Open domain ->
Analog / mixed-signal / circuit design

Circuit

Circuit depth links device curves to bias, gain, delay, noise, feedback, and variation.

  • differential pair gain and input range
  • comparator metastability
  • standard-cell sizing
  • STA path replay
Open domain ->
SRAM / DRAM / memory test / architecture

Memory

Memory depth now spans SRAM cell/peripheral/I/O, DRAM/HBM locality, HBM/base-die partitioning, DRAM 1T1C sensing, retention, refresh, RowHammer, ECC/scrub guardbands, NAND threshold margin, MRAM switching/read/retention, FeFET/FeRAM, PCM, ReRAM, CIM, SCM, eDRAM/MIMCAP, 3D memory, and hierarchy placement while keeping device, cell, peripheral, controller, package, system, reliability, and evidence layers separate.

  • SRAM column decoder and bank I/O handoff
  • compiler-style aspect ratio and words-per-row tradeoff
  • measured DRAM retention, RowHammer, ECC, and scrub replacement data
  • measured replacement evidence for emerging-memory placement, endurance, retention, read-margin, and integration claims
  • owned M3D SRAM replacement packet with device/compact-model lineage, topology, contacts, cross-tier connectivity, thermal/process budget, layout/PEX, cell/subarray simulation, variation, measurement, uncertainty, and review
Open domain ->
RTL / assertions / BIST / ECC

Digital / Verification

Digital depth makes cycle-level contracts, waveform evidence, assertions, timing assumptions, and fault coverage explicit.

  • FSM assertion replay
  • CDC synchronizer vocabulary
  • BIST transition and coupling fault coverage
Open domain ->
Physical design / DRC / LVS / PEX / timing

EDA / Layout

EDA and layout depth converts geometry into parasitics, constraints, violations, timing, and power integrity without redistributing restricted assets.

  • GitHub Actions repro-check for rights-cleared OpenROAD/OpenLane reports
  • rights-cleared real-tool PV report replacement package
  • owned rights-cleared same-checkpoint CTS, route, extraction, and power-integrity replacement package
  • rights-cleared owned model-to-silicon replacement package with ring-oscillator controls and uncertainty
Open domain ->
Equipment engineer / facilities / EHS boundary

Equipment / Facilities

Equipment and facilities depth teaches state, availability, environment, utilities, and EHS vocabulary while avoiding operating instructions.

  • leak-rate and pumpdown vocabulary
  • cleanroom recovery excursion
  • OEE and RAM decomposition
  • utility-load excursion
Open domain ->
Metrology / process control / yield learning

Metrology / Yield

Metrology and yield depth decides whether evidence is fit for a claim before the claim moves into process, device, or product language.

  • defect pareto and wafer map
  • split-lot DOE decision
  • yield learning curve
  • owned APC/FDC and feedforward replacement evidence
  • owned raw Gauge R&R observations, analysis outputs, references, and owner review
Open domain ->
Package / test / reliability / FA

Packaging / Test / Reliability

Packaging, test, and reliability depth follows evidence after wafer fabrication into interconnect, heat, hybrid bonding, screening, stress, and failure analysis.

  • board-level parasitic and thermal interaction
  • final-test guardband
  • HTOL and thermal-cycle reading
  • failure-analysis decision ladder
  • hybrid bonding reliability evidence
Open domain ->

BUILD SEQUENCE

Depth should accumulate, not sprawl.

For the next several passes, each new content card should land with a domain ID, a source spine, a precomputed dataset or figure, a limitation note, and a research-output target.

Process

Capstone Target

Build a process split brief that traces one unit-process change to one measurable inline metric, one device metric, one circuit or memory consequence, and one yield evidence question.

Jump to plan ->
Device

Capstone Target

Build a device extraction packet that lets a circuit learner cite threshold, gm, capacitance, and leakage without overstating fidelity.

Jump to plan ->
Circuit

Capstone Target

Build a compact circuit evidence packet where a device-level change propagates into gain, delay, power, or decision margin.

Jump to plan ->
Memory

Capstone Target

A memory evidence packet now travels from SRAM cell/peripheral/I/O evidence into DRAM/HBM locality, MRAM switching, RRAM/PCM/FeFET margin, CIM crossbar tradeoffs, controller traces, BIST, and ECC without blurring abstraction layers.

Jump to plan ->
Digital / Verification

Capstone Target

Build a verification packet where a learner can explain exactly what behavior was checked and what remains unproven.

Jump to plan ->
EDA / Layout

Capstone Target

Build a layout evidence packet that turns one geometry choice into a quantified timing, noise, or rail consequence without publishing PDK material.

Jump to plan ->
Equipment / Facilities

Capstone Target

Build an equipment evidence packet that explains why a process result depends on environment and availability without giving operating instructions.

Jump to plan ->
Metrology / Yield

Capstone Target

Build a metrology packet that can approve or reject whether a graph is strong enough to support the claim attached to it.

Jump to plan ->
Packaging / Test / Reliability

Capstone Target

Build a post-fab evidence packet that can explain what remains uncertain after a die works electrically.

Jump to plan ->

BOUNDARIES

Static education stays the product.

The roadmap deepens content and evidence. It does not add accounts, submissions, live server execution, facility-sensitive operation, or signoff authority.

allowed

Depth that is safe now

  • Static curriculum planning
  • Precomputed educational simulations
  • Rights-clean source anchors
  • Research-output checklists
  • Evidence backlog prioritization
  • Promoted depth seeds with precomputed datasets
blocked

Still not enabled

  • No live server execution
  • No accounts, uploads, payments, comments, newsletter signup, job or event submissions
  • No facility operation, equipment control, recipe workflow, ATE programming, qualification signoff, or product release