Materials
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Ultrafast X-Ray Diffraction Maps Thermal Transport In GaN Thin Films (MIT, SLAC, Stanford, Argonne)
Researchers from MIT, SLAC, Stanford University, and Argonne National Laboratory published a technical paper titled “Spatiotemporal mapping of anisotropic thermal transport in GaN thin films via ultrafast X-ray diffraction.” Abstract Excerpt: The paper presents a “non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane...
NewsMaterials
GaN HEMT short-circuit performance
Researchers based in China claim record short-circuit (SC) performance for 650V Schottky p-GaN high-electron-mobility transistors (HEMTs)...
PaperMaterials
Homojunction-induced thermopower enhancement in polymer films
It has been more than twenty years since conductive polymers began to receive attention as an emerging thermoelectric material. However, the trade-off between electrical conductivity (σ) and thermopower (S) has proven to be a major challenge that has obstructed their use in actual devices. Here we...
Aug 7, 2026Materials
arXiv semiconductor API / Paper
Niobium Titanium Nitride as a High Tensile Stress Material for Nanomechanics
Over the past decades, high-coherence mechanical resonators have been continuously pushed to new limits, using techniques such as dissipation dilution and clamp-tapering to enhance their quality factor beyond intrinsic material limitations. Today, these mechanical resonators are often fabricated from silicon-nitride, silicon-carbide or aluminum. Recently,...
Aug 7, 2026Materials
Semiconductor Today Features / News
Reducing micro-LED sidewall impact
Researchers based in China have reported 34% enhanced external quantum efficiency (EQE) of a 5μm gallium nitride (GaN) blue light-emitting diode (LED) from a neutral reactive nitrogen/hydrogen (N/H) treatment...
Aug 6, 2026Materials
Semiconductor Today News / News
Wolfspeed and LITEON partner on 800VDC power solutions for hyperscale AI data centers
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — and AI power solutions provider LITEON Technology Corp of Hsinchu, Taiwan have announced a strategic partnership and the qualification of Wolfspeed’s silicon carbide technology for deployment within LITEON’s...
Aug 6, 2026Materials
Semiconductor Today Features / News
Taking heat off AlGaN-channel HEMTs
Pennsylvania State University (PSU) and Cornell University in the USA claim record-high thermal performance for an ultra-wide-bandgap aluminium gallium nitride (AlGaN)-channel high-electron-mobility transistor (HEMT)...
Aug 5, 2026Materials
Semiconductor Today Features / News
First continuous-wave UV VCSEL operation at room temperature
Researchers based in China claim the first gallium nitride (GaN)-based electrically injected continuous-lasing ultraviolet (UV) vertical-cavity surface-emitting laser (VCSEL), achieved by “careful design and processing”...
Aug 5, 2026Materials
Semiconductor Today News / News
Power Integrations demos first 2200V GaN technology for high-voltage power systems
Power Integrations Inc of San Jose, CA, USA (which provides high-voltage integrated circuits for energy-efficient power conversion) says that PowiGaN gallium nitride (GaN) technology is now rated at up to 2200V, far exceeding the voltage capabilities of all other commercially available GaN technologies, it is claimed....
Aug 5, 2026Materials
Semiconductor Today Features / News
Gate-all-around InGaN nano-LED
University of Michigan Ann Arbor in the USA reports a gate-all-around (GAA) nanoscale light-emitting diode (nano-LED), with a conformal gate electrode surrounding both the n-GaN contact region and the InGaN/GaN multiple-quantum-well (MQW) active region...
Aug 5, 2026Materials
Semiconductor Today Features / News
UV LED reaches 19% wall-plug efficiency at 298nm
Researchers based in China report a room-temperature blue gallium nitride (GaN)-based photonic crystal surface-emitting laser (PCSEL) diode realized by regrowth-free fabrication...
Aug 4, 2026Materials
Semiconductor Today News / News
Kubos secures $2.1m investment to accelerate development of cubic-phase GaN
Micro-LED material technology company Kubos Semiconductors Ltd (which was spun out of the UK’s University of Cambridge in 2017, and is now based in the Sbarc building at Cardiff University in South Wales) has raised over $2.1m to accelerate development of its cubic-phase gallium nitride (GaN)...
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