Process / geometry
Profile and roughness state
Etch-profile and UQ artifacts define normalized teaching states without chemistry or tool settings.
roughness-profile-stateCurated evidence path
Roughness and local CD to margin
Follow a profile or local-CD proxy toward device variability and circuit margin while preserving the missing LER, calibration, and yield evidence.
Review question
Which geometry observations are required before a profile change can support a device or SRAM claim?Permanent path link
- Nodes
- 5
- Bridge edges
- 3
- Stop edges
- 1
- Measured causal edges
- 0
Evidence classes
Read the label before the color.
- ProxyA proxy is not a physical prediction, calibration result, measurement, or causal proof.
- DerivedA derived result inherits every input and model assumption and is not measured evidence.
- ReproducedReproduction establishes the stated run result, not measured-silicon agreement or transfer to another context.
- MeasuredA measurement supports only its declared grain and conditions; it does not automatically prove cross-domain causality.
Ordered evidence chain
Follow each handoff. Stop at the stop.
Node order and edge fields are fixed by the V123 contract. No page interaction generates, ranks, or extends this chain.
- Proxy evidence
Evidence bridge
profile shape to local CD or LER
- Edge ID
- roughness-profile-to-cd
- From node
- roughness-profile-state
- To node
- roughness-local-cd-state
- Unit or category
- length / spatial-distribution category
- Evidence class
- Proxy
- Status
- Bridge
- Assumption
- Normalized profile states indicate a geometry question but contain no physical LER distribution or calibrated CD map.
- Bridge condition
- Use the profile replay only to identify required metrology fields, never as a process window.
- Limitation
- Chemistry, mask transfer, stochastic roughness, spatial sampling, calibration, and physical dimensions are missing or bounded.
- Measured replacement slot
- Rights-clean CD-SEM or scatterometry maps with LER/LWR definition, sampling plan, calibration, uncertainty, and process genealogy.
- Deep link
- Open this exact edge
Process / geometry
Local CD / LER question
Local CD and line-edge roughness require spatial metrology that the public proxy does not contain.
roughness-local-cd-stateProxy evidenceEvidence bridge
local gate geometry to DIBL or Vt variability
- Edge ID
- roughness-cd-to-device
- From node
- roughness-local-cd-state
- To node
- roughness-device-variability
- Unit or category
- geometry-to-device sensitivity category
- Evidence class
- Proxy
- Status
- Bridge
- Assumption
- The V122 CD chain is an original surrogate with fixed coefficients and no calibrated device model.
- Bridge condition
- Compare only within the fixed browser rows and retain geometry, architecture, and model assumptions.
- Limitation
- No LER spectrum, 3D electrostatics, process corner, compact-model extraction, random variation, or measured Id-Vg split is present.
- Measured replacement slot
- Matched local-CD/LER metrology and device I-V on the same structures with calibrated model, spatial registration, and uncertainty.
- Deep link
- Open this exact edge
Source artifacts
Device metric
DIBL / Vt variability proxy
The browser chain maps CD bias into bounded device-effect proxies, not calibrated transistor distributions.
roughness-device-variabilityProxy evidenceEvidence bridge
device variability to delay or SNM
- Edge ID
- roughness-device-to-margin
- From node
- roughness-device-variability
- To node
- roughness-margin-proxy
- Unit or category
- timing / voltage-margin category
- Evidence class
- Proxy
- Status
- Bridge
- Assumption
- The device and circuit artifacts are separate bounded replays and do not share a calibrated variation model.
- Bridge condition
- Treat the connection as a sensitivity question, not a quantitative prediction.
- Limitation
- No statistical compact model, extracted cell, mismatch correlation, corner sweep, or joint distribution closes the bridge.
- Measured replacement slot
- Characterized compact-model variation linked to extracted inverter and SRAM structures with Monte Carlo or measured distributions and declared metric contracts.
- Deep link
- Open this exact edge
Circuit behavior
Delay / SNM sensitivity
Delay and static-margin artifacts frame circuit sensitivity under separate model conditions.
roughness-margin-proxyProxy evidenceEvidence stop
margin tail to yield impact
- Edge ID
- roughness-margin-to-yield-stop
- From node
- roughness-margin-proxy
- To node
- roughness-yield-stop
- Unit or category
- unsupported yield category
- Evidence class
- Proxy
- Status
- Stop
- Assumption
- No V122 artifact links the teaching margin proxy to observed wafer or product yield.
- Bridge condition
- Stop before root-cause, excursion, defect, yield, or disposition language.
- Limitation
- A margin proxy under bounded conditions cannot establish a manufacturing failure distribution.
- Measured replacement slot
- Registered geometry, device, circuit, test, and yield genealogy with coverage, missingness, uncertainty, competing causes, and accountable review.
- Deep link
- Open this exact edge
Evidence stop
Stop before yield attribution
No direct public genealogy joins local geometry, device variation, circuit tails, and manufactured yield.
roughness-yield-stop
Path boundary
This path does not prove causality.
The navigator presents curated associations, assumptions, evidence classes, and replacement needs. It does not prove physical or statistical causality.
A stop is a product requirement, not missing UI. The page must not fill a stopped bridge with extrapolation, AI text, a recipe, an equipment setting, or an operating recommendation.
No public path authorizes process changes, equipment control, wafer disposition, qualification, signoff, product ranking, or production release.
Return to all causal chains